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SBL(F,B)2030CT & SBL(F,B)2040CT
Vishay General Semiconductor
Document Number: 88730
Revision: 25-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0
0.2 0.4 0.6 0.8
1.0 1.2
0.01
0.1
10
1
100
TJ
= 25 °C
Pulse Width = 300 μs
1 %
D
uty Cycle
TJ
= 125 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
0.001
0.01
1
10
100
0.1
TJ
= 150 °C
TJ
= 25 °C
TJ
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse Leakage
C
u
rrent (mA)
020406080 1000.01 101 100
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.1 101 100
10 000
1000
100
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
Reverse Voltage (V)
J
u
nction Capaci
tance (pF)
0.1
100
10
1
0.1
SBL, SBLB
SBLF
t - Pulse Duration (s)
Transient Thermal Impedance (°C/
W
)
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